This paper presents the study and evaluation of a medium-voltage grid-tied cascaded H-bridge (CHB) three-phase inverter for battery energy storage systems using SiC devices as an enabling technology. The high breakdown voltage capability of SiC devices provide the advantage to significantly minimize the complexity of the CHB multilevel converter, with less power loss compared to when Silicon (Si) devices are used. The topology in this study has been selected based on high voltage SiC devices. In order to reach 13.8 kV, a nine-level CHB is needed when using 6.5 kV SiC MOSFETs. However, if 10 kV SiC MOSFETs are used, only five-levels of the CHB are required. The controls were developed, simulated and verified through an experimental prototype. The results from the scaled-down prototype proved the controls and the verification of the performance of five-level CHB three-phase inverter. For the system reliability, both open-loop and short-circuit faults are analyzed.
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Comparative Analysis of Silicon Carbide and Silicon Switching Devices for Multilevel Cascaded H-Bridge Inverter Application with Battery Energy storage
This paper investigates the use of power semiconductor devices in a nine - level cascaded H-bridge (CHB) multilevel inverter topology with an integrated battery energy storage system (BESS) for a 13.8kV medium voltage distribution system. In this topology, the bulky conventional step-up 60 Hz transformer is not used. The purpose of this study is to analyze the use of SiC MOSFET and Si IGBT devices in the inverter system to evaluate their respective performances. SiC MOSFET and Si IGBT switching devices are modeled and characterized using Saber® modeling software. The switching losses, thermal performance, and efficiency of the inverter system are investigated, and measurements are obtained from the simulation. Saber® provides a good capability for characterizing
semiconductor models in the real world, with great features of computation. A three-phase SiC power MOSFET-based multilevel CHB inverter prototype is presented for experimental verification. In the investigation, better performances of SiC MOSFET devices are recorded. SiC devices demonstrate promising performance at different switching frequency and temperature ranges.
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- Award ID(s):
- 1747757
- NSF-PAR ID:
- 10084311
- Date Published:
- Journal Name:
- 2018 9th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
- Page Range / eLocation ID:
- 1 to 5
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1109/PEDG.2018.8447775
