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  • Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates
Title: Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates
Award ID(s):
1508530 1751455
NSF-PAR ID:
10128738
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
American Vacuum Society
Date Published:
Journal Name:
Journal of Vacuum Science & Technology A
Volume:
38
Issue:
1
ISSN:
0734-2101
Page Range / eLocation ID:
Article No. 013406
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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