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Abstract Conjugated polymers have gained momentum as serious contenders for next‐generation flexible electronics, but their susceptibility to water represents a major problem. Atmospheric water is ubiquitous and its inadvertent diffusion into polymeric devices generates charge carrier traps, reducing their performance and stability. A good understanding of the physical processes associated with the presence of water is therefore necessary in order to be able to suppress the related trapping events and enable stable, high‐performance devices. Here, evidence is shown that water introduces traps in the bandgap of organic semiconductors and the impact of these traps on the electrical properties of polymer organic field‐effect transistors (OFETs) based on indacenodithiophene‐co‐benzothiadiazole (IDT‐BT) is investigated. Monitoring device parameters and the trap density of states (t‐DOS) during moisture extrication reveals the existence of two types of water‐related traps: shallow traps originating from water inhabiting the voids of the polymer film and deeper traps arising from chemisorbed water present at the dielectric/polymer interface. A trap passivation method based on flame‐annealing is introduced to eliminate the interfacial traps. As a result, stable OFETs, with threshold voltage shifts less than ΔVth = −0.3 V and constant mobilities (<10% variation) after three months of storage, are fabricated.
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Charge carrier traps in organic semiconductors: a review on the underlying physics and impact on electronic devices
The weak intermolecular interactions inherent in organic semiconductors make them susceptible to defect formation, resulting in localized states in the band-gap that can trap charge carriers at different timescales. Charge carrier trapping is thus ubiquitous in organic semiconductors and can have a profound impact on their performance when incorporated into optoelectronic devices. This review provides a comprehensive overview on the phenomenon of charge carrier trapping in organic semiconductors, with emphasis on the underlying physical processes and its impact on device operation. We first define the concept of charge carrier trap, then outline and categorize different origins of traps. Next, we discuss their impact on the mechanism of charge transport and the performance of electronic devices. Progress in the filed in terms of characterization and detection of charge carrier traps is reviewed together with insights on future direction of research. Finally, a discussion on the exploitation of traps in memory and sensing applications is provided.
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- PAR ID:
- 10171210
- Date Published:
- Journal Name:
- Journal of Materials Chemistry C
- Volume:
- 8
- Issue:
- 3
- ISSN:
- 2050-7526
- Page Range / eLocation ID:
- 759 to 787
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/C9TC05695E
