More Like this

1. Modifications of ion beam sputtered tantala thin films by secondary argon and oxygen bombardment

   https://doi.org/10.1364/AO.59.00A150  

   Yang, Le; Randel, Emmett; Vajente, Gabriele; Ananyeva, Alena; Gustafson, Eric; Markosyan, Ashot; Bassiri, Riccardo; Fejer, Martin; Menoni, Carmen (January 2020, Applied Optics)

   Amorphous tantala ( ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$) thin films were deposited by reactive ion beam sputtering with simultaneous low energy assist ${\mathrm{A}\mathrm{r}}^{+}$or ${\mathrm{A}\mathrm{r}}^{+}/{\mathrm{O}}_2^{+}$bombardment. Under the conditions of the experiment, the as-deposited thin films are amorphous and stoichiometric. The refractive index and optical band gap of thin films remain unchanged by ion bombardment. Around 20% improvement in room temperature mechanical loss and 60% decrease in absorption loss are found in samples bombarded with 100-eV ${\mathrm{A}\mathrm{r}}^{+}$. A detrimental influence from low energy ${\mathrm{O}}_2^{+}$bombardment on absorption loss and mechanical loss is observed. Low energy ${\mathrm{A}\mathrm{r}}^{+}$bombardment removes excess oxygen point defects, while ${\mathrm{O}}_2^{+}$bombardment introduces defects into the tantala films. 

   more » « less
2. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi_Teja; Jain, Barsha; Velpula, Swetha; Nguyen, Hoang-Duy; Nguyen, Hieu_Pham_Trung (September 2020, Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic ${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by $\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by $\sim <\#comment/>11$times, and enhances optical power by $\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of $\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is $\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is $\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is $\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at $\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters. 

   more » « less
3. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

   more » « less
4. Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer

   https://doi.org/10.1364/JOSAB.399773  

   Jain, Barsha; Velpula, Ravi_Teja; Velpula, Swetha; Nguyen, Hoang-Duy; Nguyen, Hieu_Pham_Trung (August 2020, Journal of the Optical Society of America B)

   In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for $\sim <\#comment/>254\mathrm{n}\mathrm{m}$wavelength emission. The enhanced carrier transport in the DSGS structure results in reduced electron leakage into the $p$-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is $\sim <\#comment/>3.56$times higher and electron leakage is $\sim <\#comment/>12$times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be $\sim <\#comment/>9.1\mathrm{\%<\#comment/>}$, which is $\sim <\#comment/>4.5$times lower than the regular LED structure. 

   more » « less
5. Resonance tuning for dynamic Huygens metasurfaces

   https://doi.org/10.1364/JOSAB.427848  

   Ollanik, Adam_J; Oguntoye, Isaac; Ji, Yaping; Escarra, Matthew_D (July 2021, Journal of the Optical Society of America B)

   Metasurfaces with dynamic optical performance have the potential to enable a broad range of applications. We computationally investigate the potential of dielectric Huygens metasurfaces, supporting both electric and magnetic dipole resonances, as a candidate platform for dynamic tuning. The asymmetric response of the two dipole resonances to changes in geometric and material parameters, and the potential for separate control of amplitude and phase, is analyzed. A review of dynamic materials, and their promise and limitations for use in dynamic Huygens metasurfaces, is discussed. Vanadium dioxide ( ${\mathrm{V}\mathrm{O}}_2$) is recognized as a singularly interesting material, due to its variable refractive index and optical absorption in response to several stimuli. Transmitted phase modulation of $\pm <\#comment/>\mathrm{\pi <\#comment/>}$is computationally demonstrated as a function of decaying resonance utilizing only the first 5% of the insulator-metal transition, corresponding to a temperature change of $<<\#comment/>{10}^{\circ <\#comment/>}\mathrm{C}$. As another case study utilizing asymmetric resonance tuning in response to changing incidence angle, phase modulation ( $2\mathrm{\pi <\#comment/>}$range for reflected light and $><\#comment/>1.5\mathrm{\pi <\#comment/>}$for transmitted light) and amplitude modulation (from $\mathrm{R}=1$to $\mathrm{T}=1$) are demonstrated using a simple silicon metasurface with varying incident angle within a range of $\sim <\#comment/>{15}^{\circ <\#comment/>}$on two axes. A promising implementation within a micro-electromechanical system (MEMS)-based spatial light modulator, similar to conventional digital micromirror devices, is discussed. 

   more » « less