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Title: Energy-Efficient Adiabatic Circuits Using Transistor-Level Monolithic 3D Integration
Charge-recycling adiabatic circuits are recently receiving increased attention due to both high energy-efficiency and higher resistance against side-channel attacks. These characteristics make adiabatic circuits a promising technique for Internet-of-things based applications. One of the important limitations of adiabatic logic is the higher intra-cell interconnect capacitance due to differential outputs and cross-coupled pMOS transistors. Since energy consumption has quadratic dependence on capacitance in adiabatic circuits (unlike conventional static CMOS where dependence is linear), higher interconnect capacitance significantly degrades the overall power savings that can be achieved by adiabatic logic, particularly in nanoscale technologies. In this paper, monolithic 3D integrated adiabatic circuits are introduced where transistor-level monolithic 3D technology is used to implement adiabatic gates. A 45 nm two-tier Mono3D PDK is used to demonstrate the proposed approach. Monolithic inter-tier vias are leveraged to significantly reduce parasitic interconnect capacitance, achieving up to 47% reduction in power-delay product as compared to 2D adiabatic circuits in a 45 nm technology node.
Authors:
;
Award ID(s):
1717306
Publication Date:
NSF-PAR ID:
10199028
Journal Name:
IEEE International System-on-Chip Conference (SOCC)
Sponsoring Org:
National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less