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Title: Towards an engineering framework for ultrafast quantum nonlinear optics
The advent of dispersion-engineered and highly nonlinear nanophotonics is expected to open up an all-optical path towards the strong-interaction regime of quantum optics by combining high transverse field confinement with ultra-short-pulse operation. Obtaining a full understanding of photon dynamics in such broadband devices, however, poses major challenges in the modeling and simulation of multimode non-Gaussian quantum physics, highlighting the need for sophisticated reduced models that facilitate efficient numerical study while providing useful physical insight. In this manuscript, we review our recent efforts in modeling broadband optical systems at varying levels of abstraction and generality, ranging from multimode extensions of quantum input-output theory for sync-pumped oscillators to the development of numerical methods based on a field-theoretic description of nonlinear waveguides. We expect our work not only to guide ongoing theoretical and experimental efforts towards next-generation quantum devices but also to uncover essential physics of broadband quantum photonics.
; ; ;
Betz, Markus; Elezzabi, Abdulhakem Y.
Award ID(s):
1918549 2011363
Publication Date:
Journal Name:
Ultrafast Phenomena and Nanophotonics XXV
Page Range or eLocation-ID:
Sponsoring Org:
National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less