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1. High-speed wide-field multi-parametric photoacoustic microscopy

   https://doi.org/10.1364/OL.391824  

   Zhong, Fenghe; Bao, Youwei; Chen, Ruimin; Zhou, Qifa; Hu, Song (May 2020, Optics Letters)

   Capable of imaging blood perfusion, oxygenation, and flow simultaneously at the microscopic level, multi-parametric photoacoustic microscopy (PAM) has quickly emerged as a powerful tool for studying hemodynamic and metabolic changes due to physiological stimulations or pathological processes. However, the low scanning speed poised by the correlation-based blood flow measurement impedes its application in studying rapid microvascular responses. To address this challenge, we have developed a new, to the best of our knowledge, multi-parametric PAM system. By extending the optical scanning range with a cylindrically focused ultrasonic transducer (focal zone, $76\text{µ<\#comment/>}\mathrm{m}\times <\#comment/>4.5\mathrm{m}\mathrm{m}$) for simultaneous acquisition of 500 B-scans, the new system is 112 times faster than our previous multi-parametric system that uses a spherically focused transducer (focal diameter, 40 µm) and enables high-resolution imaging of blood perfusion, oxygenation, and flow over an area of $4.5\times <\#comment/>1{\mathrm{m}\mathrm{m}}^2$at a frame rate of 1 Hz. We have demonstrated the feasibility of this system in the living mouse ear. Further development of this system into reflection mode will enable real-time cortex-wide imaging of hemodynamics and metabolism in the mouse brain. 

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2. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

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3. Large-area, high-numerical-aperture multi-level diffractive lens via inverse design

   https://doi.org/10.1364/OPTICA.388697  

   Meem, Monjurul; Banerji, Sourangsu; Pies, Christian; Oberbiermann, Timo; Majumder, Apratim; Sensale-Rodriguez, Berardi; Menon, Rajesh (March 2020, Optica)

   Flat lenses enable thinner, lighter, and simpler imaging systems. However, large-area and high-NA flat lenses have been elusive due to computational and fabrication challenges. Here we applied inverse design to create a multi-level diffractive lens (MDL) with thickness $<<\#comment/>1.35\text{µ<\#comment/>}\mathrm{m}$, diameter of 4.13 mm, and $\mathrm{N}\mathrm{A}=0.9$at wavelength of 850 nm (bandwidth $\sim <\#comment/>35\mathrm{n}\mathrm{m}$). Since the MDL is created in polymer, it can be cost-effectively replicated via imprint lithography. 

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4. Monolithic all-silicon flat lens for broadband LWIR imaging

   https://doi.org/10.1364/OL.426384  

   Kigner, Orrin; Meem, Monjurul; Baker, Brian; Banerji, Sourangsu; Hon, Philip_W_C; Sensale-Rodriguez, Berardi; Menon, Rajesh (August 2021, Optics Letters)

   We designed, fabricated, and characterized a flat multi-level diffractive lens comprised of only silicon with $\mathrm{d}\mathrm{i}\mathrm{a}\mathrm{m}\mathrm{e}\mathrm{t}\mathrm{e}\mathrm{r}=15.2\mathrm{m}\mathrm{m}$, focal $\mathrm{l}\mathrm{e}\mathrm{n}\mathrm{g}\mathrm{t}\mathrm{h}=19\mathrm{m}\mathrm{m}$, numerical aperture of 0.371, and operating over the long-wave infrared (LWIR) $\mathrm{s}\mathrm{p}\mathrm{e}\mathrm{c}\mathrm{t}\mathrm{r}\mathrm{u}\mathrm{m}=8\text{µ<\#comment/>}\mathrm{m}$to 14 µm. We experimentally demonstrated a field of view of 46°, depth of focus $><\#comment/>5\mathrm{m}\mathrm{m}$, and wavelength-averaged Strehl ratio of 0.46. All of these metrics were comparable to those of a conventional refractive lens. The active device thickness is only 8 µm, and its weight (including the silicon substrate) is less than 0.2 g. 

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5. Modifications of ion beam sputtered tantala thin films by secondary argon and oxygen bombardment

   https://doi.org/10.1364/AO.59.00A150  

   Yang, Le; Randel, Emmett; Vajente, Gabriele; Ananyeva, Alena; Gustafson, Eric; Markosyan, Ashot; Bassiri, Riccardo; Fejer, Martin; Menoni, Carmen (January 2020, Applied Optics)

   Amorphous tantala ( ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$) thin films were deposited by reactive ion beam sputtering with simultaneous low energy assist ${\mathrm{A}\mathrm{r}}^{+}$or ${\mathrm{A}\mathrm{r}}^{+}/{\mathrm{O}}_2^{+}$bombardment. Under the conditions of the experiment, the as-deposited thin films are amorphous and stoichiometric. The refractive index and optical band gap of thin films remain unchanged by ion bombardment. Around 20% improvement in room temperature mechanical loss and 60% decrease in absorption loss are found in samples bombarded with 100-eV ${\mathrm{A}\mathrm{r}}^{+}$. A detrimental influence from low energy ${\mathrm{O}}_2^{+}$bombardment on absorption loss and mechanical loss is observed. Low energy ${\mathrm{A}\mathrm{r}}^{+}$bombardment removes excess oxygen point defects, while ${\mathrm{O}}_2^{+}$bombardment introduces defects into the tantala films. 

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