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Abstract The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Recently, exotic defects of translation symmetry called partial dislocations have been proposed to trap gapless topological modes in some materials. Here we present experimental observations of partial-dislocation-induced topological modes in 2D and 3D insulators. We particularly focus on multipole higher-order topological insulators built from circuit-based resonator arrays, since crucially they are not sensitive to full dislocation defects, and they have a sublattice structure allowing for stacking faults and partial dislocations.
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Screw dislocations in the X-cube fracton model
The X-cube model, a prototypical gapped fracton model, was shown in Ref. [1] to have a foliation structure. That is, inside the 3+1 D model, there are hidden layers of 2+1 D gapped topological states. A screw dislocation in a 3+1 D lattice can often reveal nontrivial features associated with a layered structure. In this paper, we study the X-cube model on lattices with screw dislocations. In particular, we find that a screw dislocation results in a finite change in the logarithm of the ground state degeneracy of the model. Part of the change can be traced back to the effect of screw dislocations in a simple stack of 2+1 D topological states, hence corroborating the foliation structure in the model. The other part of the change comes from the induced motion of fractons or sub-dimensional excitations along the dislocation, a feature absent in the stack of 2+1D layers.
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- Award ID(s):
- 1654340
- PAR ID:
- 10316177
- Date Published:
- Journal Name:
- SciPost Physics
- Volume:
- 10
- Issue:
- 4
- ISSN:
- 2542-4653
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.21468/SciPostPhys.10.4.094
