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1. The missing link in gravitational-wave astronomy: A summary of discoveries waiting in the decihertz range

   https://doi.org/10.1007/s10686-021-09713-z  

   Sedda, Manuel Arca ; Berry, Christopher P. ; Jani, Karan ; Amaro-Seoane, Pau ; Auclair, Pierre ; Baird, Jonathon ; Baker, Tessa ; Berti, Emanuele ; Breivik, Katelyn ; Caprini, Chiara ; et al ( June 2021 , Experimental Astronomy)

   Abstract Since 2015 the gravitational-wave observations of LIGO and Virgo have transformed our understanding of compact-object binaries. In the years to come, ground-based gravitational-wave observatories such as LIGO, Virgo, and their successors will increase in sensitivity, discovering thousands of stellar-mass binaries. In the 2030s, the space-based LISA will provide gravitational-wave observations of massive black holes binaries. Between the $\sim 10$ ∼ 10 –10 3 Hz band of ground-based observatories and the $\sim 10^{-4}$ ∼ 1 0 − 4 –10 − 1 Hz band of LISA lies the uncharted decihertz gravitational-wave band. We propose a Decihertz Observatory to study this frequency range, and to complement observations made by other detectors. Decihertz observatories are well suited to observation of intermediate-mass ( $\sim 10^{2}$ ∼ 1 0 2 –10 4 M ⊙ ) black holes; they will be able to detect stellar-mass binaries days to years before they merge, providing early warning of nearby binary neutron star mergers and measurements of the eccentricity of binary black holes, and they will enable new tests of general relativity and the Standard Model of particle physics. Here we summarise how a Decihertz Observatory could provide unique insights into how black holes form and evolve across cosmic time, improve prospects for both multimessenger astronomy and multiband gravitational-wave astronomy, and enable new probes of gravity, particle physics and cosmology. 

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2. Gravitational Wave Sources in Our Galactic Backyard: Predictions for BHBH, BHNS, and NSNS Binaries Detectable with LISA

   https://doi.org/10.3847/1538-4357/ac8675  

   Wagg, T. ; Broekgaarden, F. S. ; de Mink, S. E. ; Frankel, N. ; van Son, L. A. C. ; Justham, S. ( October 2022 , The Astrophysical Journal)

   Future searches for gravitational waves from space will be sensitive to double compact objects in our Milky Way. We present new simulations of the populations of double black holes (BHBHs), BH neutron stars (BHNSs), and double neutron stars (NSNSs) that will be detectable by the planned space-based gravitational-wave detector called Laser Interferometer Space Antenna (LISA). For our estimates, we use an empirically informed model of the metallicity-dependent star formation history of the Milky Way. We populate it using an extensive suite of binary population-synthesis predictions for varying assumptions relating to mass transfer, common-envelope, supernova kicks, remnant masses, and wind mass-loss physics. For a 4(10) yr LISA mission, we predict between 30–370(50–550) detections over these variations, out of which 6–154 (9–238) are BHBHs, 2–198 (3–289) are BHNSs, and 3–35 (4–57) are NSNSs. We expect that about 50% (60%) can be distinguished from double white dwarf sources based on their mass or eccentricity and localization. Specifically, for about 10% (15%), we expect to be able to determine chirp masses better than 10%. For 13% (13%), we expect sky-localizations better than 1°. We discuss how the variations in the physics assumptions alter the distribution of properties of the detectable systems, even when the detection rates are unchanged. We further discuss the possibility of multimessenger observations of pulsar populations with the Square Kilometre Array and assess the benefits of extending the LISA mission.

    

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3. Probing Massive Black Hole Binary Populations with LISA

   https://doi.org/10.1093/mnras/stz3102  

   Katz, Michael L ; Kelley, Luke Zoltan ; Dosopoulou, Fani ; Berry, Samantha ; Blecha, Laura ; Larson, Shane L ( January 2020 , Monthly Notices of the Royal Astronomical Society)

   Abstract ESA and NASA are moving forward with plans to launch LISA around 2034. With data from the Illustris cosmological simulation, we provide analysis of LISA detection rates accompanied by characterization of the merging massive black hole population. Massive black holes of total mass ∼105 − 1010M⊙ are the focus of this study. We evolve Illustris massive black hole mergers, which form at separations on the order of the simulation resolution (∼kpc scales), through coalescence with two different treatments for the binary massive black hole evolutionary process. The coalescence times of the population, as well as physical properties of the black holes, form a statistical basis for each evolutionary treatment. From these bases, we Monte Carlo synthesize many realizations of the merging massive black hole population to build mock LISA detection catalogs. We analyze how our massive black hole binary evolutionary models affect detection rates and the associated parameter distributions measured by LISA. With our models, we find massive black hole binary detection rates with LISA of ∼0.5 − 1 yr−1 for massive black holes with masses greater than 105M⊙. This should be treated as a lower limit primarily because our massive black hole sample does not include masses below 105M⊙, which may significantly add to the observed rate. We suggest reasons why we predict lower detection rates compared to much of the literature. 

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4. Weighing the Darkness. II. Astrometric Measurement of Partial Orbits with Gaia

   https://doi.org/10.3847/1538-4357/acbb5f  

   Andrews, Jeff J. ; Breivik, Katelyn ; Chawla, Chirag ; Rodriguez, Carl L. ; Chatterjee, Sourav ( April 2023 , The Astrophysical Journal)

   Over the course of several years, stars trace helical trajectories as they traverse across the sky due to the combined effects of proper motion and parallax. It is well known that the gravitational pull of an unseen companion can cause deviations to these tracks. Several studies have pointed out that the astrometric mission Gaia will be able to identify a slew of new exoplanets, stellar binaries, and compact object companions with orbital periods as short as tens of days to as long as Gaia's lifetime. Here, we use mock astrometric observations to demonstrate that Gaia can identify and characterize black hole companions to luminous stars with orbital periods longer than Gaia's lifetime. Such astrometric binaries have orbital periods too long to exhibit complete orbits, and instead are identified through curvature in their characteristic helical paths. By simultaneously measuring the radius of this curvature and the orbital velocity, constraints can be placed on the underlying orbit. We quantify the precision with which Gaia can measure orbital accelerations and apply that to model predictions for the population of black holes orbiting stars in the stellar neighborhood. Although orbital degeneracies imply that many of the accelerations induced by hidden black holes could also be explained by faint low-mass stars, we discuss how the nature of certain putative black hole companions can be confirmed with high confidence using Gaia data alone.

    

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5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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