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Title: Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs
Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing ( Vside ). The subthreshold slope (SS) and drain induced barrier lowering (DIBL) decrease and threshold voltage ( Vt ) increases linearly with reduced temperature and reduced side-gate bias. Detailed analysis on a 27 nm × 78 nm (width × length) device shows SS decreasing from 115 mV/dec at 400 K to 90 mV/dec at 300 K and down to 36 mV/dec at 100 K, DIBL decreasing by approximately 10 mV/V for each 100 K reduction in operating temperature, and Vt increasing from 0.42 to 0.61 V as the temperature is reduced from 400 to 100 K. Vt can be adjusted from ∼ 0.3 to ∼ 1.1 V with ∼ 0.3 V/V sensitivity by depletion or accumulation of the body of the device using Vside . This high level of tunability allows electronic control of Vt and drive current for variable temperature operation in a wide temperature range with extremely low leakage currents ( < 10 −13 A).  more » « less
Award ID(s):
1711626
PAR ID:
10342040
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
ISSN:
0018-9383
Page Range / eLocation ID:
1 to 6
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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