Tailoring thermal radiation using low‐infrared‐emissivity materials has drawn significant attention for diverse applications, such as passive radiative heating and thermal camouflage. However, the previously reported low‐infrared‐emissivity materials have the bottleneck of lacking independent control over visible optical properties. Here, a novel visibly transparent and infrared reflective (VTIR) coating by exploiting a nano‐mesh patterning strategy with an oxide–metal–oxide tri‐layer structure is reported. The VTIR coating shows simultaneously high transmittance in the visible region (>80% at 550 nm) and low emissivity in the mid‐infrared region (< 20% in 7–14 µm). The VTIR coating not only achieves a radiative heating effect of 6.6 °C for indoor conditions but also enables a synergetic effect with photothermal materials to keep human body warm at freezing temperatures for outdoor conditions, which is 10–15 °C warmer than normal cotton and Mylar film. Moreover, it demonstrates an excellent thermal camouflage effect at various temperatures (34–250 °C) and good compatibility with visible camouflage on the same object, making it ideal for both daytime and nighttime cloaking. With its unique and versatile spectral features, this novel VTIR design has great potential to make a significant impact on personal heat management and counter‐surveillance applications.
With a high NIR reflection, a transparent radiative cooling photonic structure consisting of 2D silica gratings atop ZnO/Ag/ZnO is conceived and demonstrated. With 77% visible light transmitted, 57% NIR solar radiation reflected and 91% thermal infrared radiation emitted, a synthetical cooling is realized by this photonic structure. The theoretical total cooling power of this structure is more than double that of a planar silica and is 63.3% higher than that of a typical NIR reflecting filter, that is, ZnO/Ag/ZnO film. The field test facing the sunlight shows that the air temperature inside a chamber sealed with this structure is 12.5 and 2.5 °C lower than that sealed with planar silica and ZnO/Ag/ZnO, respectively. This work shows that the concept of daytime radiative cooling can be applied in combination with the utilization of visible light and the proposed ultrathin photonic structure shows potentials for passive radiative cooling of transparent applications.
more » « less- Award ID(s):
- 2011401
- NSF-PAR ID:
- 10377083
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials Interfaces
- Volume:
- 9
- Issue:
- 30
- ISSN:
- 2196-7350
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Passive radiative cooling, drawing heat energy of objects to the cold outer space through the atmospheric transparent window, is significant for reducing the energy consumption of buildings. Daytime and nighttime radiative cooling have been extensively investigated in the past. However, radiative cooling which can continuously regulate its cooling temperature, like a valve, according to human need is rarely reported. In this study, we propose a reconfigurable photonic structure, based on the effective medium theory and semi-analytical calculations, for the adaptive radiative cooling by continuous variation of the emission spectra in the atmospheric window. This is realized by the deformation of a one-dimensional polydimethylsiloxane (PDMS) grating and nanoparticle-embedded PDMS thin film when subjected to mechanical stress/strain. The proposed structure reaches different stagnation temperatures under certain strains. A dynamic tuning in emissivity under different strains results in a continuously variable “ON”/“OFF” mode in a particular atmospheric window that corresponds to the deformation-induced fluctuation of the operating temperatures of the reconfigurable nanophotonic structure.
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Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).more » « less
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Using Ag nanowires (NWs) is a promising approach to make flexible and transparent conducting electrodes for organic photovoltaics (OPVs). However, the roughness of the NWs can decrease device performance. Herein, a Ag NW electrode embedded in a UV‐curable epoxy that uses a simple mechanical lift‐off process resulting in highly planar electrodes is demonstrated. A bimodal blend of Ag NWs with varying aspect ratios is used to optimize the transparency and conductivity of the electrode. In addition, a ZnO layer is coated on the Ag NWs prior to the embedding process to ensure low contact resistance in the OPV cells. The resulting resin‐embedded ZnO‐encapsulated silver nanowire (REZEN) electrode is found to have excellent mechanical stability. REZEN electrode‐based OPV cells exhibit comparable performance with reference devices, achieving maximum power conversion efficiency (PCE) of 13.5% and 13.6% respectively. The REZEN‐based OPV cells are also mechanically robust, retaining 97% of their PCE after 5000 cycles at
R = 1.2 mm and 94% PCE after 1000 cycles atR = 0.55 mm. This flexibility is among the highest reported for freestanding devices. Thus, the REZEN electrode is a promising and simple strategy to achieve mechanically robust ITO‐free flexible OPV cells.
