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Abstract Metal halide perovskites have drawn tremendous attention in optoelectronic applications owing to the rapid development in photovoltaic and light‐emitting diode devices. More recently, these materials are demonstrated as excellent gain media for laser applications due to their large absorption coefficient, low defect density, high charge carrier mobility, long carrier diffusion length, high photoluminescence quantum yield, and low Auger recombination rate. Despite the great progress in laser applications, the development of perovskite lasers is still in its infancy and the realization of electrically pumped lasers has not yet been demonstrated. To accelerate the development of perovskite‐based lasers, it is important to understand the fundamental photophysical characteristics of perovskite gain materials. Here, the structure and gain behavior in various perovskite materials are discussed. Then, the effects of charge carrier dynamics and electron–phonon interaction on population inversion in different types of perovskite materials are analyzed. Further, recent advances in perovskite‐based lasers are also highlighted. Finally, a perspective on perovskite material design is presented and the remaining challenges of perovskite lasers are discussed.
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Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands
The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and -C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitride materials and their alloys, in particular AlGaN, are the material of choice for the development of this ultrashort-wavelength laser technology. Despite significant progress in AlGaN-based light-emitting diodes (LEDs), the technological advancement and innovation in diode lasers at these spectral bands is lagging due to several technical challenges. Here, the authors review the progress of AlGaN electrically-pumped lasers with respect to very recent achievements made by the scientific community. The devices based on both thin films and nanowires demonstrated to date will be discussed in this review. The state-of-the-art growth technologies, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates used for the laser demonstrations will be highlighted. We will also outline technical challenges associated with the laser development, which must be overcome in order to achieve a critical technological breakthrough and fully realize the potential of these lasers.
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- Award ID(s):
- 2020015
- PAR ID:
- 10404149
- Date Published:
- Journal Name:
- Photonics
- Volume:
- 8
- Issue:
- 7
- ISSN:
- 2304-6732
- Page Range / eLocation ID:
- 267
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/photonics8070267
