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2D native surface oxides formed on low melting temperature metals such as indium and gallium offer unique opportunities for fabricating high-performance flexible electronics and optoelectronics based on a new class of liquid metal printing (LMP). An inherent property of these Cabrera-Mott 2D oxides is their suboxide nature (e.g., In2O3−x), which leads high mobility LMP semiconductors to exhibit high electron concentrations (ne > 1019 cm−3) limiting electrostatic control. Binary alloying of the molten precursor can produce doped, ternary metal oxides such as In-X-O with enhanced electronic performance and greater bias-stress stability, though this approach demands a deeper understanding of the native oxides of alloys. This work presents an approach for hypoeutectic rapid LMP of crystalline InGaOx (IGO) at ultralow process temperatures (180 °C) beyond the state of the art to fabricate transistors with 10X steeper subthreshold slope and high mobility (≈18 cm2 Vs−1). Detailed characterization of IGO crystallinity, composition, and morphology, as well as measurements of its electronic density of states (DOS), show the impact of Ga-doping and reveal the limits of doping induced amorphization from hypoeutectic precursors. The ultralow process temperatures and compatibility with high-k Al2O3 dielectrics shown here indicate potential for 2D IGO to drive low-power flexible transparent electronics.
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Molecular dynamics study of a new metastable allotropic crystalline form of gallium—supertetrahedral gallium
A new metastable crystalline form of gallium has been computationally designed using density functional calculations with imposing periodic boundary conditions. The geometric and electronic structures of the predicted new allotrope were calculated on the basis of a diamond lattice in which all carbon atoms are replaced by gallium Ga4tetrahedra. This form does not have any imaginary phonons, thus it is a metastable crystalline form of gallium. The new form of gallium is a metal and shows high plasticity and low‐melting temperature. Molecular dynamics simulations show that this form of gallium will melt at about 273 K with a sharp increase in temperature in the system during the melting process from 273 to 1800 K. This melting process is very different from conventional melting, where temperature stays the same until complete melting. That unusual melting can be explained by the fact that supertetrahedral gallium is a metastable structure that has an excess of strain energy released during melting. If made this new material may find many useful applications as a new low density metal with stored internal energy. © 2019 Wiley Periodicals, Inc.
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- Award ID(s):
- 1664379
- PAR ID:
- 10461659
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Journal of Computational Chemistry
- Volume:
- 40
- Issue:
- 20
- ISSN:
- 0192-8651
- Page Range / eLocation ID:
- p. 1861-1865
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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