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1. Deterministic quasi-continuous tuning of phase-change material integrated on a high-volume 300-mm silicon photonics platform

   https://doi.org/10.1038/s44310-024-00009-6  

   Chen, Rui; Tara, Virat; Choi, Minho; Dutta, Jayita; Sim, Justin; Ye, Julian; Fang, Zhuoran; Zheng, Jiajiu; Majumdar, Arka (December 2024, npj Nanophotonics)

   Abstract Programmable photonic integrated circuits (PICs) consisting of reconfigurable on-chip optical components have been creating new paradigms in various applications, such as integrated spectroscopy, multi-purpose microwave photonics, and optical information processing. Among many reconfiguration mechanisms, non-volatile chalcogenide phase-change materials (PCMs) exhibit a promising approach to the future very-large-scale programmable PICs, thanks to their zero static power and large optical index modulation, leading to extremely low energy consumption and ultra-compact footprints. However, the scalability of the current PCM-based programmable PICs is still limited since they are not directly off-the-shelf in commercial photonic foundries now. Here, we demonstrate a scalable platform harnessing the mature and reliable 300 mm silicon photonic fab, assisted by an in-house wide-bandgap PCM (Sb₂S₃) integration process. We show various non-volatile programmable devices, including micro-ring resonators, Mach-Zehnder interferometers and asymmetric directional couplers, with low loss (~0.0044 dB/µm), large phase shift (~0.012 π/µm) and high endurance (>5000 switching events with little performance degradation). Moreover, we showcase this platform’s capability of handling relatively complex structures such as multiple PIN diode heaters in devices, each independently controlling an Sb₂S₃segment. By reliably setting the Sb₂S₃segments to fully amorphous or crystalline state, we achieved deterministic multilevel operation. An asymmetric directional coupler with two unequal-length Sb₂S₃segments showed the capability of four-level switching, beyond cross-and-bar binary states. We further showed unbalanced Mach-Zehnder interferometers with equal-length and unequal-length Sb₂S₃segments, exhibiting reversible switching and a maximum of 5 ($$N+1,N=4$$ $N+1,N=4$) and 8 ($${2}^{N},N=3$$ $2^N,N=3$) equally spaced operation levels, respectively. This work lays the foundation for future programmable very-large-scale PICs with deterministic programmability. 

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2. Nonvolatile Electrically Reconfigurable Integrated Photonic Switch Enabled by a Silicon PIN Diode Heater

   https://doi.org/10.1002/adma.202001218  

   Zheng, Jiajiu; Fang, Zhuoran; Wu, Changming; Zhu, Shifeng; Xu, Peipeng; Doylend, Jonathan_K; Deshmukh, Sanchit; Pop, Eric; Dunham, Scott; Li, Mo; et al (June 2020, Advanced Materials)

   Abstract Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic–photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo‐optic or electro‐optic modulation effects, resulting in large footprints and high energy consumption. As a promising alternative, chalcogenide phase‐change materials (PCMs) exhibit strong optical modulation in a static, self‐holding fashion, but the scalability of present PCM‐integrated photonic applications is still limited by the poor optical or electrical actuation approaches. Here, with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electrically reconfigurable photonic switches using PCM‐clad silicon waveguides and microring resonators are demonstrated. As a result, intrinsically compact and energy‐efficient switching units operated with low driving voltages, near‐zero additional loss, and reversible switching with high endurance are obtained in a complementary metal‐oxide‐semiconductor (CMOS)‐compatible process. This work can potentially enable very large‐scale CMOS‐integrated programmable electronic–photonic systems such as optical neural networks and general‐purpose integrated photonic processors. 

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3. Non-volatile materials for programmable photonics

   https://doi.org/10.1063/5.0165309  

   Fang, Zhuoran; Chen, Rui; Tossoun, Bassem; Cheung, Stanley; Liang, Di; Majumdar, Arka (October 2023, APL Materials)

   Programmable photonics play a crucial role in many emerging applications, from optical accelerators for machine learning to quantum information technologies. Conventionally, photonic systems are tuned by mechanisms such as the thermo-optic effect, free carrier dispersion, the electro-optic effect, or micro-mechanical movement. Although these physical effects allow either fast (>100 GHz) or large contrast (>60 dB) switching, their high static power consumption is not optimal for programmability, which requires only infrequent switching and has a long static time. Non-volatile materials, such as phase-change materials, ferroelectrics, vanadium dioxide, and memristive metal oxide materials, can offer an ideal solution thanks to their reversible switching and non-volatile behavior, enabling a truly “set-and-forget” programmable unit with no static power consumption. In recent years, we have indeed witnessed the fast adoption of non-volatile materials in programmable photonic systems, including photonic integrated circuits and free-space meta-optics. Here, we review the recent progress in the field of programmable photonics, based on non-volatile materials. We first discuss the material’s properties, operating mechanisms, and then their potential applications in programmable photonics. Finally, we provide an outlook for future research directions. The review serves as a reference for choosing the ideal material system to realize non-volatile operation for various photonic applications. 

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4. Non-volatile electrically programmable integrated photonics with a 5-bit operation

   https://doi.org/10.1038/s41467-023-39180-3  

   Chen, Rui; Fang, Zhuoran; Perez, Christopher; Miller, Forrest; Kumari, Khushboo; Saxena, Abhi; Zheng, Jiajiu; Geiger, Sarah J.; Goodson, Kenneth E.; Majumdar, Arka (December 2023, Nature Communications)

   Abstract Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb₂S₃)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb₂S₃-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of$$\sim 10\,{fJ}/n{m}^{3}$$ $~10fJ/n{m}^3$. Remarkably, Sb₂S₃is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer. 

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5. Low-power quasi-continuous hybrid volatile/nonvolatile tuning of ring resonators

   https://doi.org/10.1063/5.0236098  

   Dutta, Jayita; Chen, Rui; Tara, Virat; Majumdar, Arka (February 2025, APL Photonics)

   Programmable photonic integrated circuits are expected to play an increasingly important role in enabling high-bandwidth optical interconnects and large-scale in-memory computing as needed to support the rise of artificial intelligence and machine learning technology. To that end, chalcogenide-based non-volatile phase-change materials (PCMs) present a promising solution due to zero static power. However, high switching voltage and a small number of operating levels present serious roadblocks to the widespread adoption of PCM-programmable units. Here, we demonstrate an electrically programmable wide bandgap Sb2S3-clad silicon ring resonator using a silicon microheater at a complementary-metal–oxide–semiconductor compatible voltage of <3 V. Our device shows a low switching energy of 35.33 nJ (0.48 mJ) for amorphization (crystallization) and reversible phase transitions with high endurance (>2000 switching events) near 1550 nm. Combining a volatile thermo-optic effect with non-volatile PCMs, we demonstrate 7-bit (127 levels) operation with excellent repeatability and reduced power consumption. Our demonstration of low-voltage and low-energy operation, combined with the hybrid volatile–nonvolatile approach, marks a significant step toward integrating PCM-based programmable units in large-scale optical interconnects. 

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