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Free carrier absorption (FCA) is established to be the cause of nonlinear losses in plasma‐enhanced chemical vapor deposition (PECVD) silicon‐rich nitride (SRN) waveguides. To validate this hypothesis, a photo‐induced current is measured in SRN thin films with refractive indices varying between 2.5 and 3.15 when a C‐band laser light is illuminating the SRN films at various powers, indicating the generation of free carriers. Furthermore, nonlinear loss dynamics is, for the first time, measured and characterized in detail in SRN waveguides by utilizing high peak power C‐band complex shape optical pulses for estimation of free carrier generation (FCG) and free carrier recombination (FCR) lifetimes and their dynamics. Both FCG and FCR are found to decrease with an increase in the refractive index of SRN, and, specifically, the FCR lifetimes are found (92 ± 7) ns, (39 ± 3) ns, and (31 ± 2) ns for the SRN indices of 2.7, 3, and 3.15, respectively. Lastly, nonlinear losses in high refractive index SRN waveguides are demonstrated to be minimized and altogether avoided when the pulse duration reduced below the free carrier generation lifetime, thus providing a way of taking a full advantage of the large inherent SRN nonlinear properties. 

Silicon nitride is widely used in integrated photonics for optical nonlinear wave mixing due to its low optical losses combined with relatively high nonlinear optical properties and a wide‐range transparency window. It is known that a higher concentration of Si in silicon‐rich nitride (SRN) magnifies both the nonlinear response and optical losses, including nonlinear losses. To address the trade‐off, four‐wave mixing (FWM) is implemented in over a hundred SRN waveguides prepared by plasma‐enhanced chemical vapor deposition in a wide range of SRN refractive indices varying between 2.5 and 3.2 (measured in the C‐band). It is determined that SRN with a refractive index of about 3 maximizes the FWM efficiency for continuous‐wave operation, indicating that the refractive index of SRN is indeed a crucial optimization parameter for nonlinear optics applications. The FWM efficiency is limited by large nonlinear optical losses observed in SRN waveguides with indices larger than 2.7, which are not related to two‐photon absorption. Finally, the third‐order susceptibility and the nonlinear refractive index are estimated for multiple SRN refractive indices, and, specifically, the nonlinearities as large as and are estimated in a waveguide with an SRN refractive index of 3.2. 

An energy/area-efficient low-cost broadband linearity enhancement technique using the hybrid of notch-filter and bandpass-filter micro-ring modulators (Hybrid-MRMs) is proposed to achieve higher than 3.01-dB improvement in spurious-free-dynamic-ranges with intermodulation distortions (dSFDRIMD) and 17.9-dB improvement in integral nonlinearity (dINLPP) over a conventional notch-filter MRM (NF-MRM) across a 4.8-dB extinction-ratio full-scale range based on rapid silicon-photonics fabrication results for the emerging applications of various analog and digital optical communication systems. 

This paper adopts advanced monolithic silicon-photonics integrated-circuits manufacturing capabilities to realize system-on-chip photonic-electronic linear-algebra accelerators for self-attention computation in various applications of deep-learning neural networks and Large Language Models. With the features of holistic co-design approaches, optical comb-based broadband modulations, and consecutive matrix-multiplication architecture, the system/circuit/device-level simulations of the proposed accelerator can achieve 2.14-TMAC/s/mm2 computation density and 27.9-fJ/MAC energy efficiency with practical considerations of power/area overhead due to photonic-electronic on-chip conversions, integrations, and calibrations. 

A system-on-chip (SoC) photonic-electronic linear-algebra accelerator with the features of wavelength-division-multiplexing (WDM) based broadband photodetections and high-dimensional matrix-inversion operations fabricated in advanced monolithic silicon-photonics (M-SiPh) semiconductor process technology is proposed to achieve substantial leaps in computation density and energy efficiency, including realistic considerations of energy/area overhead due to electronic/photonic on-chip conversions, integrations, and calibrations through holistic co-design methodologies to support linear-detection based massive multiple-input multiple-output (MIMO) decoding technology requiring the inversion of channel matrices and other emergent applications limited by linear-algebra computation capacities. 

Abstract Nanophotonics allows to employ light-matter interaction to induce nonlinear optical effects and realize non-conventional memory and computation capabilities, however to date, light-liquid interaction was not considered as a potential mechanism to achieve computation on a nanoscale. Here, we experimentally demonstrate self-induced phase change effect which relies on the coupling between geometric changes of thin liquid film to optical properties of photonic waveguide modes, and then employ it for neuromorphic computing. In our optofluidic silicon photonics system we utilize thermocapillary-based deformation of thin liquid film capable to induce nonlinear effect which is more than one order of magnitude higher compared to the more traditional heat-based thermo-optical effect, and allowing operation as a nonlinear actuator and memory element, both residing at the same compact spatial region. The resulting dynamics allows to implement Reservoir Computing at spatial region which is approximately five orders of magnitude smaller compared to state-of-the-art experimental liquid-based systems. 

This study proposes a novel technique for a 2D beam steering system using hybrid plasmonic phase shifters with a cylindrical configuration in a 2D periodic array suitable for LIDAR applications. A nanoscale VCSEP design facilitates a sub-wavelength spacing between individual phase shifters, yielding an expanded field of view and side lobes suppression. The proposed design includes a highly doped sub-micron silicon pillar covered by a thin layer of nonlinear material and an additional conductive metal layer. Characterization of a single VCSEP demonstrated a Free Spectral Range (FSR) of 53.28 ± 2.5 nm and a transmission variation of 3 dB, with V_πL equal to 0.075 V-mm. 

The quantum theory of optical coherence plays a ubiquitous role in identifying optical emitters. An unequivocal identification, however, presumes that the photon number statistics is resolved from timing uncertainties. We demonstrate from first principle that the observed nth-order temporal coherence is a n-fold convolution of the instrument responses and the expected coherence. The consequence is detrimental in which the photon number statistics is masked from the unresolved coherence signatures. The experimental investigations are thus far consistent with the theory developed. We envision the present theory will mitigate the false identification of optical emitters and enlarge the coherence deconvolution to an arbitrary order. 

Integrated third-harmonic generators enable on-chip wavelength conversion translating telecom signals to the visible spectrum. Despite the desirable functionality, the device performance is susceptible to phase distortions. Here, we present a design method of compensating the Kerr-induced distortions in third-harmonic generation. The design method yields a chirped Bragg grating theoretically improving the conversion efficiency by ∼30 dB. We envision the design method will pave the way for demonstrating efficient infrared-to-visible upconversion in silicon nitride chips.