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Abstract Vanadium Dioxide (VO₂) is a material that exhibits a phase transition from an insulating state to a metallic state at ≈68 °C. During a temperature cycle consisting of warming followed by cooling, the resistivity of VO₂changes by several orders of magnitude over the course of the hysteresis loop. Using a focused laser beam (λ = 532 nm), it is shown that it is possible to optically generate micron‐sized metallic patterns within the insulating phase of a VO₂planar junction which can be used to tune, on demand, the resistance of the VO₂junction. A resistor network simulation is used to characterize the resulting resistance drops in the devices. These patterns persist while the base temperature is held constant within the hysteretic region while being easily removed totally by simply lowering the base temperature. Surprisingly, it is also observed that the pattern can be partially erased using an atomic force microscope (AFM) tip on the submicron scale. This erasing process can be qualitatively explained by the temperature difference between the VO₂surface and the tip which acts as a local cooler. This optical and AFM resistive fine‐tuning offers the possibility of creating controllable synaptic weights between room‐temperature VO₂neuristors. 

Abstract Ramp‐reversal memory has recently been discovered in several insulator‐to‐metal transition materials where a non‐volatile resistance change can be set by repeatedly driving the material partway through the transition. This study uses optical microscopy to track the location and internal structure of accumulated memory as a thin film of VO₂is temperature cycled through multiple training subloops. These measurements reveal that the gain of insulator phase fraction between consecutive subloops occurs primarily through front propagation at the insulator‐metal boundaries. By analyzing transition temperature maps, it is found, surprisingly, that the memory is also stored deep inside both insulating and metallic clusters throughout the entire sample, making the metal‐insulator coexistence landscape more rugged. This non‐volatile memory is reset after heating the sample to higher temperatures, as expected. Diffusion of point defects is proposed to account for the observed memory writing and subsequent erasing over the entire sample surface. By spatially mapping the location and character of non‐volatile memory encoding in VO₂, this study results enable the targeting of specific local regions in the film where the full insulator‐to‐metal resistivity change can be harnessed in order to maximize the working range of memory elements for conventional and neuromorphic computing applications. 

Abstract Charge modulations have been widely observed in cuprates, suggesting their centrality for understanding the high- T c superconductivity in these materials. However, the dimensionality of these modulations remains controversial, including whether their wavevector is unidirectional or bidirectional, and also whether they extend seamlessly from the surface of the material into the bulk. Material disorder presents severe challenges to understanding the charge modulations through bulk scattering techniques. We use a local technique, scanning tunneling microscopy, to image the static charge modulations on Bi 2− z Pb z Sr 2− y La y CuO 6+ x . The ratio of the phase correlation length ξ CDW to the orientation correlation length ξ orient points to unidirectional charge modulations. By computing new critical exponents at free surfaces including that of the pair connectivity correlation function, we show that these locally 1D charge modulations are actually a bulk effect resulting from classical 3D criticality of the random field Ising model throughout the entire superconducting doping range. 

Scanning probes reveal complex, inhomogeneous patterns on the surface of many condensed matter systems. In some cases, the patterns form self-similar, fractal geometric clusters. In this paper, we advance the theory of criticality as it pertains to those geometric clusters (defined as connected sets of nearest-neighbor aligned spins) in the context of Ising models. We show how data from surface probes can be used to distinguish whether electronic patterns observed at the surface of a material are confined to the surface, or whether the patterns originate in the bulk. Whereas thermodynamic critical exponents are derived from the behavior of Fortuin–Kasteleyn (FK) clusters, critical exponents can be similarly defined for geometric clusters. We find that these geometric critical exponents are not only distinct numerically from the thermodynamic and uncorrelated percolation exponents, but that they separately satisfy scaling relations at the critical fixed points discussed in the text. We furthermore find that the two-dimensional (2D) cross-sections of geometric clusters in the three-dimensional (3D) Ising model display critical scaling behavior at the bulk phase transition temperature. In particular, we show that when considered on a 2D slice of a 3D system, the pair connectivity function familiar from percolation theory displays more robust critical behavior than the spin-spin correlation function, and we calculate the corresponding critical exponent. We discuss the implications of these two distinct length scales in Ising models. We also calculate the pair connectivity exponent in the clean 2D case. These results extend the theory of geometric criticality in the clean Ising universality classes, and facilitate the broad application of geometric cluster analysis techniques to maximize the information that can be extracted from scanning image probe data in condensed matter systems. 

Abstract Uniaxial random field disorder induces a spontaneous transverse magnetization in the XY model. Adding a rotating driving field, we find a critical point attached to the number of driving cycles needed to complete a limit cycle, the first discovery of this phenomenon in a magnetic system. Near the critical drive, time crystal behavior emerges, in which the period of the limit cycles becomes an integer n  > 1 multiple of the driving period. The period n can be engineered via specific disorder patterns. Because n generically increases with system size, the resulting period multiplication cascade is reminiscent of that occurring in amorphous solids subject to oscillatory shear near the onset of plastic deformation, and of the period bifurcation cascade near the onset of chaos in nonlinear systems, suggesting it is part of a larger class of phenomena in transitions of dynamical systems. Applications include magnets, electron nematics, and quantum gases.