skip to main content


Title: Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
Award ID(s):
1711030
NSF-PAR ID:
10067089
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Advanced Materials
Volume:
29
Issue:
38
ISSN:
0935-9648
Page Range / eLocation ID:
1702557
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract We demonstrate controlled Si doping in the low doping range of 5 × 10 15 –2.5 × 10 16 cm −3 with mobility >1000 cm 2  V −1 s −1 in GaN films grown by metalorganic chemical vapor deposition. The carbon-related compensation and mobility collapse were prevented by controlling the electrochemical potential near the growth surface via chemical potential control (CPC) and defect quasi-Fermi level (dQFL) point-defect management techniques. While the CPC was targeted to reduce the net C N concentration, the dQFL control was used to reduce the fraction of C atoms with the compensating configuration, i.e. C N − 1 . The low compensating acceptor concentration was confirmed via temperature-dependent Hall effect analysis and capacitance–voltage measurements. 
    more » « less