Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
- Award ID(s):
- 1711030
- NSF-PAR ID:
- 10067089
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 29
- Issue:
- 38
- ISSN:
- 0935-9648
- Page Range / eLocation ID:
- 1702557
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract We demonstrate controlled Si doping in the low doping range of 5 × 10 15 –2.5 × 10 16 cm −3 with mobility >1000 cm 2 V −1 s −1 in GaN films grown by metalorganic chemical vapor deposition. The carbon-related compensation and mobility collapse were prevented by controlling the electrochemical potential near the growth surface via chemical potential control (CPC) and defect quasi-Fermi level (dQFL) point-defect management techniques. While the CPC was targeted to reduce the net C N concentration, the dQFL control was used to reduce the fraction of C atoms with the compensating configuration, i.e. C N − 1 . The low compensating acceptor concentration was confirmed via temperature-dependent Hall effect analysis and capacitance–voltage measurements.more » « less