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  • Circuit-level reliability simulator for front-end-of-line and middle-of-line time-dependent dielectric breakdown in FinFET technology
Title: Circuit-level reliability simulator for front-end-of-line and middle-of-line time-dependent dielectric breakdown in FinFET technology
This paper presents a lifetime simulator for both Front-End-of-Line (FEOL) time dependent dielectric breakdown (TDDB) and the newly emerging Middle-of-Line (MOL) time dependent dielectric breakdown for FinFET technology. A lifetime assessment flow for digital circuits and microprocessors is proposed for the target wearout mechanisms, and its associated vulnerable feature extraction algorithms are discussed in detail. Our simulator incorporates the detailed electrical stress, temperature, linewidth of each standard cell within the digital circuit and microprocessor. Also, FEOL TDDB and MOL TDDB lifetimes are combined in the calculation of TDDB lifetime. Circuit designers can use the resulting lifetime information to guide and improve their circuits to make them more robust and reliable way.  more » « less
Award ID(s):
1700914
PAR ID:
10104481
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
VLSI Test Symposium
Page Range / eLocation ID:
1 to 6
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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