Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 /$R_{\text{on,sp}}$ of up to 0.95 GW/cm 2
- Award ID(s):
- 1719875
- Publication Date:
- NSF-PAR ID:
- 10148252
- Journal Name:
- IEEE Electron Device Letters
- Volume:
- 41
- Issue:
- 1
- Page Range or eLocation-ID:
- 107 to 110
- ISSN:
- 0741-3106
- Sponsoring Org:
- National Science Foundation
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