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Title: Fabrication of Localized Silicon-on-Insulator Based Rhombus-Shaped Channels in Silicon
Fabricating localized silicon-on-insulator (LSOI) on bulk silicon eliminates the need for using expensive SOI wafers for silicon waveguides and MEMS applications. One of the most important building blocks in silicon photonics is optical waveguide, which usually consists of silicon surrounded by silicon dioxide with refractive indices of 3.5 and 1.5, respectively. It was observed that the SOI wafer puts restrictions on the integration of electronics and photonics because the buried oxide is too thin for field confinement. Hence, fabrication of LSOI in standard silicon wafers is considered to have precise control of the oxide thickness which will lead to effective integration of electronic and photonic devices. We used rhombus-shaped channel method in the fabrication of LSOI structure that can be produced on any part of a bulk silicon wafer.
Authors:
; ; ; ; ; ;
Award ID(s):
1643788
Publication Date:
NSF-PAR ID:
10274707
Journal Name:
ECS Meeting Abstracts
Volume:
Volume MA2019-01
Sponsoring Org:
National Science Foundation
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