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Title: Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application
Silicon carbide (SiC) MOSFET features low switching loss and it is advantageous in high switching frequency application, but the manufacture per Ampere cost is approximately five times higher than the silicon (Si) IGBT. Therefore, by paralleling Si IGBT and SiC MOSFET together, a trade-off between cost and loss is achieved. In this paper, a four control freedoms active gate driver (AGD) including turn-on delay, turn-off delay, and two independent gate voltages, is proposed to optimize the performance of the paralleled device. By adjusting these four control freedoms, optimal operation for paralleled device can be obtained. Moreover, the proposed AGD can dynamically adjust the current ratio between two paralleled devices, which can help achieve thermal balance between two devices and improve system reliability. Double pulse test (DPT) experimental results are presented and analyzed to validate the effectiveness of the proposed AGD for paralleled Si IGBT and SiC MOSFET application.  more » « less
Award ID(s):
1939144
NSF-PAR ID:
10317584
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    Acknowledgement

    This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.

    References

    [1] Younget al.,IEEE Computational Intelligence Magazine,vol. 13, no. 3, pp. 55-75, 2018.

    [2] Hadsellet al.,Journal of Field Robotics,vol. 26, no. 2, pp. 120-144, 2009.

    [3] Najafabadiet al.,Journal of Big Data,vol. 2, no. 1, p. 1, 2015.

    [4] Zhaoet al.,Applied Physics Reviews,vol. 7, no. 1, 2020.

    [5] Zidanet al.,Nature Electronics,vol. 1, no. 1, pp. 22-29, 2018.

    [6] Wulfet al.,SIGARCH Comput. Archit. News,vol. 23, no. 1, pp. 20–24, 1995.

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    [8] Ielminiet al.,Nature Electronics,vol. 1, no. 6, pp. 333-343, 2018.

    [9] Changet al.,Nano Letters,vol. 10, no. 4, pp. 1297-1301, 2010.

    [10] Qinet al., Physica Status Solidi (RRL) - Rapid Research Letters, pssr.202200075R1, In press, 2022.

     
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