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The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study explores aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics and the ability to host defect-center related single-photon emitters. We have conducted a comprehensive analysis of the creation of single-photon emitters in AlN, utilizing heavy ion irradiation and thermal annealing techniques. Subsequently, we have performed a detailed analysis of their photophysical properties. Guided by theoretical predictions, we assessed the potential of Zirconium (Zr) ions to create optically addressable spin defects and employed Krypton (Kr) ions as an alternative to target lattice defects without inducing chemical doping effects. With a 532 nm excitation wavelength, we found that single-photon emitters induced by ion irradiation were primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions. The density of these emitters increased with ion fluence, and there was an optimal value that resulted in a high density of emitters with low AlN background fluorescence. Under a shorter excitation wavelength of 405 nm, Zr-irradiated AlN exhibited isolated point-like emitters with fluorescence in the spectral range theoretically predicted for spin-defects. However, similar defects emitting in the same spectral range were also observed in AlN irradiated with Kr ions as well as in as-grown AlN with intrinsic defects. This result is supportive of the earlier theoretical predictions, but at the same time highlights the difficulties in identifying the sought-after quantum emitters with interesting properties related to the incorporation of Zr ions into the AlN lattice by fluorescence alone. The results of this study largely contribute to the field of creating quantum emitters in AlN by ion irradiation and direct future studies emphasizing the need for spatially localized Zr implantation and testing for specific spin properties. 

Single photon emitters (SPEs) in hexagonal boron nitride (hBN) are elementary building blocks for room-temperature on-chip quantum photonic technologies. However, fundamental challenges, such as slow radiative decay and nondeterministic placement of the emitters, limit their full potential. Here, we demonstrate large-area arrays of plasmonic nanoresonators (PNRs) for Purcell-induced room-temperature SPEs by engineering emitter-cavity coupling and enhancing radiative emission. Gold-coated silicon pillars with an alumina spacer enable a 10-fold local-field enhancement in the emission band of native hBN defects. We observe bright SPEs with an average saturated emission rate surpassing 5 million counts per second, an average lifetime of <0.5 ns, and 29% yield. Density functional theory reveals the beneficial role of an alumina spacer between hBN and gold, mitigating the electronic broadening of emission from defects proximal to the metal. Our results offer arrays of bright, heterogeneously integrated single-photon sources, paving the way for robust and scalable quantum information systems. 

Newly discovered silicon nitride quantum emitters hold great promise for industrial-scale quantum photonic applications. We assess the performance of intrinsic room-temperature SiN single-photon emitters for quantum key distribution, showcasing their exceptional brightness and single-photon purity. 

We demonstrate an industrially scalable fabrication process for the integration of SiN/SiO₂single photon emitters into on-chip nanophotonic structures with sub-diffraction limited placement accuracy. 

Abstract A robust process for fabricating intrinsic single‐photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room‐temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime‐limited linewidths is provided through measurements of inhomogeneous and temperature‐dependent broadening of the zero‐phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero‐phonon lines with instrument‐limited linewidths. 

We report on the generation of single-photon emitters in aluminum nitride films through Zr-ion implantation, which was predicted to form optically addressable spin defects. We studied implantation conditions, post-implantation procedures, and properties of resulting emitters. 

We create intrinsic quantum emitters in silicon nitride, study their structure and temperature-dependent optical properties, and demonstrate monolithic integration with photonic waveguides to evaluate the potential of these single-photon sources for quantum information applications. 

We report on the generation of single-photon emitters in silicon nitride. We demonstrate monolithic integration of these quantum emitters with silicon nitride waveguides showing a room-temperature off-chip count-rate of ~10⁴counts/s and clear antibunching behavior. 

Silicon nitride has great potential for integrated quantum photonics. We demonstrate monolithic integration of intrinsic quantum emitters in SiN with waveguides which show a room-temperature off-chip count rate of ~10⁴counts/s and clear antibunching behavior.