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Ever since the discovery of the charge density wave (CDW) transition in the kagome metal ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$, the nature of its symmetry breaking has been under intense debate. While evidence suggests that the rotational symmetry is already broken at the CDW transition temperature ( $T_{\mathrm{CDW}}$), an additional electronic nematic instability well below $T_{\mathrm{CDW}}$has been reported based on the diverging elastoresistivity coefficient in the anisotropic channel ( $m_{E_{2g}}$). Verifying the existence of a nematic transition below $T_{\mathrm{CDW}}$is not only critical for establishing the correct description of the CDW order parameter, but also important for understanding low-temperature superconductivity. Here, we report elastoresistivity measurements of ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$using three different techniques probing both isotropic and anisotropic symmetry channels. Contrary to previous reports, we find the anisotropic elastoresistivity coefficient $m_{E_{2g}}$is temperature independent, except for a step jump at $T_{\mathrm{CDW}}$. The absence of nematic fluctuations is further substantiated by measurements of the elastocaloric effect, which show no enhancement associated with nematic susceptibility. On the other hand, the symmetric elastoresistivity coefficient $m_{A_{1g}}$increases below $T_{\mathrm{CDW}}$, reaching a peak value of 90 at $T^{*}=20\mathrm{K}$. Our results strongly indicate that the phase transition at $T^{*}$is not nematic in nature and the previously reported diverging elastoresistivity is due to the contamination from the $A_{1g}$channel. Published by the American Physical Society2024 

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to −0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques. 

Abstract Niobium chloride (Nb₃Cl₈) is a layered two-dimensional semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is at its infancy. In this study, we investigate the phonon dynamics of Nb₃Cl₈in bulk and few layer flakes using polarized Raman spectroscopy and density-functional theory (DFT) analysis to determine the material’s vibrational modes, as well as their symmetrical representations and atomic displacements. We experimentally resolved 12 phonon modes, five of which areA_1gmodes while the remaining seven areE_gmodes, which is in strong agreement with our DFT calculation. Layer-dependent results suggest that the Raman peak positions are mostly insensitive to changes in layer thickness, while peak intensity and full width at half maximum are affected. Raman measurements as a function of excitation wavelength (473–785 nm) show a significant increase of the peak intensities when using a 473 nm excitation source, suggesting a near resonant condition. Temperature-dependent Raman experiments carried out above and below the transition temperature did not show any change in the symmetries of the phonon modes, suggesting that the structural phase transition is likely from the high temperatureP $\overline{\text{3}m}$1 phase to the low-temperatureR $\overline{3m}$phase. Magneto-Raman measurements carried out at 140 and 2 K between −2 and 2 T show that the Raman modes are not magnetically coupled. Overall, our study presented here significantly advances the fundamental understanding of layered Nb₃Cl₈material which can be further exploited for future applications. 

Abstract Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, niobium halide semiconductors Nb 3 X 8 ( X  = Cl, Br, I) have been predicted to be two-dimensional magnets and these materials are also interesting for their breathing kagome geometry. However, experimental electronic structure studies of these promising materials are still lacking. Here, we report the spectroscopic evidence of flat and weakly dispersing bands in breathing-kagome semiconductor Nb 3 I 8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of niobium atoms and have niobium d -orbital character. They are found to be sensitive to the polarization of the incident photon beam. Our study provides insight into the electronic structure and flat band topology in an exfoliable kagome semiconductor, thereby providing an important platform to understand the interaction of geometry and electron correlations in two-dimensional materials. 

Hydrated vanadium pentoxide (VOH) can deliver a gravimetric capacity as high as 400 mA h g −1 owing to the variable valence states of the V cation from 5+ to 3+ in an aqueous zinc ion battery. The incorporation of divalent transition metal cations has been demonstrated to overcome the structural instability, sluggish kinetics, fast capacity degradation, and serious polarization. The current study reveals that the catalytic effects of transition metal cations are probably the key to the significantly improved electrochemical properties and battery performance because of the higher covalent character of 55% in the Cu–O bond in comparison with 32% in the Mg–O bond in the respective samples. Cu( ii ) pre-inserted VOH (CuVOH) possesses a significantly enhanced intercalation storage capacity, an increased discharge voltage, great transport properties, and reduced polarization, while both VOH and Mg( ii ) pre-inserted VOH (MgVOH) demonstrate similar electrochemical properties and performances, indicating that the incorporation of Mg cations has little or no impact. For example, CuVOH has a redox voltage gap of 0.02 V, much smaller than 0.25 V for VOH and 0.27 V for MgVOH. CuVOH shows an enhanced exchange current density of 0.23 A g −1 , compared to 0.20 A g −1 for VOH and 0.19 A g −1 for MgVOH. CuVOH delivers a zinc ion storage capacity of 379 mA h g −1 , higher than 349 mA h g −1 for MgVOH and 337 mA h g −1 for VOH at 0.5 A g −1 . CuVOH shows an energy efficiency of 72%, superior to 53% for VOH and 55% for MgVOH. All of the results suggest that pre-inserted Cu( ii ) cations played a critical role in catalyzing the zinc ion intercalation reaction, while the Mg( ii ) cations did not exert a detectable catalytic effect. 

Hydrated vanadates are promising layered cathodes for aqueous zinc-ion batteries owing to their specific capacity as high as 400 mA h g −1 ; however, the structural instability causes serious cycling degradation through repeated intercalation/deintercalation reactions. This study reveals the chemically inserted Mn( ii ) cations act as structural pillars, expand the interplanar spacing, connect the adjacent layers and partially reduce pentavalent vanadium cations to tetravalent. The expanded interplanar spacing to 12.9 Å reduces electrostatic interactions, and transition metal cations collectively promote and catalyze fast and more zinc ion intercalation at higher discharge current densities with much enhanced reversibility and cycling stability. Manganese expanded hydrated vanadate (MnVO) delivers a specific capacity of 415 mA h g −1 at a current density of 50 mA g −1 and 260 mA h g −1 at 4 A g −1 with a capacity retention of 92% over 2000 cycles. The energy efficiency increases from 41% for hydrated vanadium pentoxide (VOH) to 70% for MnVO at 4 A g −1 and the open circuit voltage remains at 85% of the cutoff voltage in the MnVO battery on the shelf after 50 days. Expanded hydrated vanadate with other transition metal cations for high-performance aqueous zinc-ion batteries is also obtained, suggesting it is a general strategy for exploiting high-performance cathodes for multi-valent ion batteries.