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This paper presents a dual-band RF rectifying circuit for wireless power transmission at 1.17 GHz and 2.4 GHz. A dual-band harmonic-tuned inverse-class F/class-F mode power amplifier using a 10 W GaN device has been utilized to implement the proposed rectifier with an on-board coupler and phase shifter. The matching circuit is precisely designed so that the circuit operates in inverse class F and class F mode in the lower and upper frequency bands using dual-band harmonic tuning, respectively. Measurement results show that the rectifier circuit has 78% and 76% efficiencies at 1.17 GHz and 2.4 GHz frequency bands, respectively. To the best of the authors' knowledge, this rectifier is the first demonstration of a dual-band harmonic-tuned synchronous rectifier using a GaN HEMT device with an integrated coupler and phase-shifter for a watt-level RF input power.
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A Dual-Path Transformer-Based Multiband Power Amplifier for mm-Wave 5G Applications
This article presents a dual-band power amplifier for 28 and 39 GHz frequency bands based on a new dual-path transformer (DPT). This DPT can provide two optimum inductive values at two different frequency bands to optimally design the matching networks for each band without using any switch circuitries. It operates as the output and input matching networks in a parallel power combiner and divider, respectively. DPT-based PA breaks the trade-off between bandwidth and performance in conventional wideband PAs by separating one whole wideband into two narrow bands providing optimum input and output matchings for each band. The DPT-based PA has two input and two output ports. One set of input and output ports is dedicated to a lower frequency band and the other set of input and outport ports can be used for a higher frequency band. Each output port can drive a separate antenna in a phased array for each frequency band. The proposed PA prototype is fabricated in a 65 nm CMOS process achieving 15.3 and 14.0 dBm of saturated output power in 28 and 39 GHz. The peak efficiency of the PA is 34.1% and 30.2% at 28 and 39 GHz frequency bands. The PA has a measured EVM with 64-QAM modulated signal in both frequency bands showing −25.03 and −25.10 dB in the low and higher frequency bands, respectively.
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- PAR ID:
- 10538248
- Publisher / Repository:
- Institute of Electrical and Electronics Engineers
- Date Published:
- Journal Name:
- IEEE Journal of Solid-State Circuits
- Volume:
- 59
- Issue:
- 6
- ISSN:
- 0018-9200
- Page Range / eLocation ID:
- 1643 to 1655
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1109/JSSC.2023.3344073
